SGS5N150UFTU数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.
SGS5N150UF is designed for the Switching Power Supply applications.

特性 Features

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input ImpedanceApplication
  Switching Power Supply - High Input Voltage Off-line Converter

简介

SGS5N150UFTU属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的SGS5N150UFTU晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。