SGP20N60HS数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.

特性 Features

·30% lower E off compared to previous generation
·Short circuit withstand time – 10μs
·Designed for operation above 30kHz
·High ruggedness, temperature stable behaviour
·Pb-free lead plating; RoHS compliant
·Qualified according to JEDEC for target applications

应用 Application

Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers,  welding and SMPS segments.  SGP20N60HSData Sheet (355 KB, EN)ParametricSGP20N60HSTechnology IGBT HighSpeedSwitching Frequency min max30.0kHz 100.0kHzPackage TO-220Voltage Class max600.0VIC(@100°) max20.0AIC(@25°) max36.0AICpuls max80.0APtot max178.0WVCE(sat) 3.5V Eon 0.6mJ Eoff(Hard Switching) 0.36mJ td(on) 17.0ns tr 13.0ns td(off) 222.0ns tf 13.0ns QGate 100.0nC VCE max600.0VSwitching Frequency HighSpeed 30-100 kHzData SheetTitleSizeDateVersionSGP20N60HSEN355 KB14 九月 200902_04SGP20N60HSEN383 KB03 十二月 200902_05Application NotesTitleSizeDateVersionApplication Note Discrete IGBT Datasheet ExplanationEN1.7 MB14 十月 201602_00Application Note IGBT Definition of Junction TemperatureEN84 KB09 四月 2009Recommendations for Assembly of Infineon TO PackagesEN1.1 MB09 四月 2009Description: IGBT (Insulated Gate Bipolar Transistor)EN625 KB19 六月 2010The Reverse Behavior of the NPT-IGBT in its On-StateEN167 KB19 六月 2010Connecting IGBTs in Parallel (Fundamentals)EN97 KB19 六月 2010Recommendations for Screw Tightening Torque for IGBT Discrete DevicesEN983 KB29 十一月 2013Additional Product InformationTitleSizeDateVersionNomenclature Guide IGBT Discretes and DiodesEN474 KB16 五月 201702_00Application BrochureTitleSizeDateVersionApplication Brochure Major Home ApplianceEN7.3 MB08 十一月 201601_00Efficient Solutions for Industrial Motor Control and DrivesEN2 MB01 三月 201401_00Product Selection GuideTitleSizeDateVersionPower Management Selection Guide 2017ENJA22.2 MB21 二月 201700_00Selection Guide - Industrial and general purpose gate driver ICsEN3.5 MB15 五月 201701_00Selection Guide IGBT DiscretesEN989 KB12 四月 201600_00Product CatalogueTitleSizeDateVersionShort Form Catalog - May 2017EN2.9 MB12 五月 201703_00Material Content SheetInfineon Support\">InfoTitleSizeDateVersionMCDS_2013-08-29_04-17-01_MA000867062_PG-TO220-3-1.pdfEN24 KB31 十月 201301_00销售产品名称SGP20N60HSOPNSGP20N60HSXKSA1产品状态discontinued在线订购封装名称PG-TO220-3无铅产品yes无卤yes通过无铅认证yes包装规格500包装类型TUBEMoisture LevelNAPCB Design DataTitleSizeDateVersionPCB Footprints & Symbols - Discrete IGBT - Altium - v2.0EN926 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0EN603 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0EN117 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0EN776 KB21 十一月 201302_00EiceDRIVER™ 2EDL Driver IC FamilyLength 9:212EDL半桥驱动芯片EiceDRIVER™ 2EDL是基于绝缘体上硅技术的600伏半桥门级驱动芯片系列, 其内部集成高性能低阻快恢复自举二极管, 适用于需高效率和小体积的各种应用.Length 8:30Package DataTitleSizeDateVersionPG-TO220-3-1 | SGP20N60HSXKSA1EN450 KB11 四月 201601_00PCB Design DataTitleSizeDateVersionPCB Footprints & Symbols - Discrete IGBT - Altium - v2.0EN926 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0EN603 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0EN117 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0EN776 KB21 十一月 201302_00查找您的问题的答案很遗憾，您的浏览器不支持嵌入式框架(iframe)。您可以点击此处查看嵌入式页面。英飞凌欢迎您的评论及咨询。如果您对我们的产品有任何问题，请填写下面的表格。您的电子邮件将被转发给相关的负责人，他们会尽快与您联系。按下“提交“按钮后，您可以添加与咨询相关的附件。名*姓*电子邮件*电话公司*公司网址 (URL)行业*[请选择]AUTOMOTIVECHIP CARDCOMMUNICATIONCONSUMERDATA PROCESSINGDISTRIBUTION PARTNERINDUSTRIALELECTRONIC MANUFACTURING SERVICES (EMS)EDUCATION/ACADEMICOTHERNONE其他行业国家*[请选择]AfghanistanAlbaniaAlgeriaAmerican SamoaAndorraAngolaAnguillaAntarcticaAntigua and BarbudaArgentinaArmeniaArubaAustraliaAustriaAzerbaijanBahamasBahrainBangladeshBarbadosBelarusBelgiumBelizeBeninBermudaBhutanBoliviaBonaire, Sint Eustatius and SabaBosnia and HerzegovinaBotswanaBouvet IslandBrazilBritish Indian Ocean TerritoryBritish Virgin IslandsBruneiBulgariaBurkina FasoBurundiCambodiaCameroonCanadaCape VerdeCayman IslandsCentral African RepublicChadChileChinaChristmas IslandCocos IslandsColombiaComorosCongoCook IslandsCosta RicaCroatiaCubaCuraçaoCyprusCzech RepublicCôte d'IvoireDenmarkDjiboutiDominicaDominican RepublicEcuadorEgyptEl SalvadorEquatorial GuineaEritreaEstoniaEthiopiaFalkland IslandsFaroe IslandsFijiFinlandFranceFrench GuianaFrench PolynesiaFrench Southern TerritoriesGabonGambiaGeorgiaGermanyGhanaGibraltarGreeceGreenlandGrenadaGuadeloupeGuamGuatemalaGuernseyGuineaGuinea-BissauGuyanaHaitiHeard Island And McDonald IslandsHondurasHong KongHungaryIcelandIndiaIndonesiaIranIraqIrelandIsle Of ManIsraelItalyJamaicaJapanJerseyJordanKazakhstanKenyaKiribatiKuwaitKyrgyzstanLaosLatviaLebanonLesothoLiberiaLibyaLiechtensteinLithuaniaLuxembourgMacaoMacedoniaMadagascarMalawiMalaysiaMaldivesMaliMaltaMarshall IslandsMartiniqueMauritaniaMauritiusMayotteMexicoMicronesiaMoldovaMonacoMongoliaMontenegroMontserratMoroccoMozambiqueMyanmarNamibiaNauruNepalNetherlandsNetherlands AntillesNew CaledoniaNew ZealandNicaraguaNigerNigeriaNiueNorfolk IslandNorth KoreaNorthern Mariana IslandsNorwayOmanPakistanPalauPalestinePanamaPapua New GuineaParaguayPeruPhilippinesPitcairnPolandPortugalPuerto RicoQatarReunionRomaniaRussiaRwandaSaint BarthélemySaint HelenaSaint Kitts And NevisSaint LuciaSaint MartinSaint Pierre And MiquelonSaint Vincent And The GrenadinesSamoaSan MarinoSao Tome And PrincipeSaudi ArabiaSenegalSerbiaSeychellesSierra LeoneSingaporeSint Maarten (Dutch part)SlovakiaSloveniaSolomon IslandsSomaliaSouth AfricaSouth Georgia And The South Sandwich IslandsSouth KoreaSouth SudanSpainSri LankaSudanSurinameSvalbard And Jan MayenSwazilandSwedenSwitzerlandSyriaTaiwanTajikistanTanzaniaThailandThe Democratic Republic Of CongoTimor-LesteTogoTokelauTongaTrinidad and TobagoTunisiaTurkeyTurkmenistanTurks And Caicos IslandsTuvaluU.S. Virgin IslandsUgandaUkraineUnited Arab EmiratesUnited KingdomUnited StatesUnited States Minor Outlying IslandsUruguayUzbekistanVanuatuVaticanVenezuelaVietnamWallis And FutunaWestern SaharaYemenZambiaZimbabweÅland Islands首选分销商/经销商*[请选择]AdvanIDeArihant ArrowASECAvnetChangnam Chip 1 StopComelecDabo Digi-KeyEBVEdal Elsena Eurotone Farnell FutureHans BuchIntron JannockJingchuan KERN Macnica MouserNiskoNordicPantek/Allplus RSRutronik RyoyoSAPLSascoHolz SilicaSilverstarSterntecSymmetronTecstarTomenToyotsu WPGYuban OTHER其他分销商/经销商产品名称*预计全年生产量 (件）每年*[请选择]less than 100100 to 1.0001.000 to 10.00010.000 to 100.000more than 100.000unknown请尽可能详细的描述您的技术问题*我同意英飞凌科技股份有限公司及其授权合作伙伴收集并使用我的个人信息。*我希望收到关于英飞凌产品的通讯邮件。（您可随时免费取消该订阅。）欲了解更多有关我们信息保护规定的信息， 请点击 信息保护规定提交重置所有标有星号（*）的字段都是必填字段。Where to buyPlease use our location finder to get in contact with your nearest Infineon distributor or sales officeFind a locationAsk InfineonproductareaSupportMissingFirstname = '缺少名';productareaSupportIncorrectNoabbreviation = '请不要缩写';productareaSupportMissingLastname = '缺少姓';productareaSupportMissingEmail = '缺少邮件地址';productareaSupportIncorrectEmail = '邮件地址不正确';productareaSupportMissingCompany = '缺少公司名称';productareaSupportIncorrectCompanyUrl = '请输入有效网址';productareaSupportMissingIndustryfield = '缺少工业领域';productareaSupportMissingCountry = '缺少所在国家';productareaSupportMissingDistributor = '缺少经销商名称';productareaSupportMissingProductname = '缺少产品名称';productareaSupportMissingProductionvolume = '缺少需求量';productareaSupportMissingTechnicalquestion = '缺少技术问题';productareaSupportMissingCaptcha = '验证码无法识别';productareaSupportIncorrectDetails = '请给出更多详情';productareaSupportDataAgree = '请同意我们处理您的个人资料。';Home> 产品分类Follow us·Infineon
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简介

SGP20N60HS属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的SGP20N60HS晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。