GaN HEMTs for General Purpose

Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.\n This device target applications are low current and wide band applications for high voltage. • High Voltage Operation: VDS=50V\n• High Power: 40.5dBm(typ.) @Psat\n• High Efficiency: 55% (typ.) @Psat• Liner Gain: 16.0dB (typ.) @f=3.5GHz\n• Proven Reliability;

SUMITOMO

住友商事

EXTERNAL ??TAMPER PROOF

文件：2.1802 Mbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件：1.67749 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件：1.67749 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司