5 AMP PNP HIGH SPEED POWER TRANSISTOR 120 VOLTS

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SSDI

5 A, 120 V PNP High Speed Power Transistor

• BVCEO 250V typical\n• Fast Switching\n• High Frequency\n• High Linear Gain, Low Saturation Voltage\n• 200°C Operating Temperature\n• High Current, High Voltage Version of the SDT3303\n• TX, TXV, S-Level Screening Available;

SSDI

TV COLOR PROCESSOR

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MOTOROLA

摩托罗拉

Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：139.15 Kbytes 页数：10 Pages

IRF