Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：112.95 Kbytes 页数：10 Pages

IRF

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：139.15 Kbytes 页数：10 Pages

IRF

N-Ch and P-Ch Fast Switching MOSFETs

文件：1.10284 Mbytes 页数：7 Pages

UNITPOWER

群祥科技

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • DC/DC Conversion - Low-Side Switch • Notebook PC • Gaming

文件：694.26 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

8.5 Gbps 4 횞 4 Crosspoint Switch

文件：754.99 Kbytes 页数：2 Pages

VITESSE