200 A,100 V High Energy NPN Transistor

• BVCBO = 250 V MIN\n• 600 Watts Power Dissipation\n• Excellent SOA Curve\n• Es/b of 800 mJ\n• Gain of over 5 at 200 A\n• High Reliability Construction\n• Planar Chip Construction with Low Leakage and Very Fast Switching\n• TX, TXV, S-Level Screening Available;

SSDI

200 A,120 V High Energy NPN Transistor

• BVCBO = 250 V MIN\n• 600 Watts Power Dissipation\n• Excellent SOA Curve\n• Es/b of 800 mJ\n• Gain of over 5 at 200 A\n• High Reliability Construction\n• Planar Chip Construction with Low Leakage and Very Fast Switching\n• TX, TXV, S-Level Screening Available;

SSDI