Power MOSFET

Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：412.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA

Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：387.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：412.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA

Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：387.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Very Low Capacitance Plastic Packaged Silicon PIN Diodes

Description The SMP1345 series of plastic packaged, surface mountable PIN diodes is designed for high volume LNB, WLAN and switch applications from 10 MHz to 6 GHz. The short carrier lifetime of typically 100 ns, combined with its thin I region width of nominally, 10 µm, results in a fast speed R

文件：168.19 Kbytes 页数：6 Pages

SKYWORKS

思佳讯