Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：357.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：411.65 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Motor drive application. • 4V drive.

文件：286.02 Kbytes 页数：4 Pages

SANYO

三洋

P-channel Enhancement Mode Power MOSFET

Features • VDS= -60V, ID= -50A RDS(ON)

文件：835.06 Kbytes 页数：4 Pages

BYCHIP

百域芯

P-Channel 60 V (D-S) MOSFET

文件：971.79 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

单 P 沟道，功率 MOSFET，-60V，-12A，62mΩ

This P-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimizegate charge and low on resistance.\nThis devices is suitable for applications with low gate charge driving or low on resistance requirements. • Low On-Resistance\n• Improves efficiency by reducing conduction losses\n• High Speed Switching\n• Reduces dynamic power losses\n• Low Gate Charge\n• Ease of drive, faster turn-on\n• ESD Diode - Protected Gate\n• ESD resistance\n• RoHS Compliance;

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 62mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：275.9 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：411.65 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：357.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 62mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：287.21 Kbytes 页数：2 Pages

ISC

无锡固电