1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER

文件：112.41 Kbytes 页数：2 Pages

SSDI

SILICON CONTROLLED RECTIFIER

文件：111.78 Kbytes 页数：2 Pages

SSDI

1.6 A, 300 V Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 μA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed;

SSDI

N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 27m (VGS = 10V) RDS(ON) 31m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)

文件：1.30392 Mbytes 页数：5 Pages

UMW

友台半导体

SOT-23 Plastic-Encapsulate MOSFETS

Features VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON)

文件：1.72217 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

N-Channel 100-V (D-S) MOSFET

文件：80.06 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

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