P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：913.36 Kbytes 页数：4 Pages

Bychip

百域芯

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.)

文件：237.42 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.)

文件：243.59 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：912.26 Kbytes 页数：4 Pages

Bychip

百域芯

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：913.34 Kbytes 页数：4 Pages

Bychip

百域芯

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：253.17 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：258.73 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -100V ■ Lower RDS(ON) : 0.444 Ω (Typ.)

文件：259.62 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

文件：869.42 Kbytes 页数：4 Pages

Bychip

百域芯

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

文件：861.7 Kbytes 页数：4 Pages

Bychip

百域芯