P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：913.34 Kbytes 页数：4 Pages

Bychip

百域芯

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.)

文件：243.59 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

文件：238.1 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.)

文件：237.42 Kbytes 页数：7 Pages

Fairchild

仙童半导体