Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -100V ■ Lower RDS(ON) : 0.225 Ω (Typ.)

文件：273.15 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

文件：230.46 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

文件：459.25 Kbytes 页数：6 Pages

TOSHIBA

东芝

Hyperabrupt Varactor-Tuned Oscillators

Description HP VTO-9000 Hyperabrupt Series oscillators use a silicon transistor chip as a negative resistance oscillator. The oscillation frequency is determined by a silicon hyperabrupt varactor diode acting as a voltage-variable capacitor in a thin-film microstripline resonator. Featur

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HP

安捷伦