Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ.)

文件：311.9 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

文件：309.66 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ.)

文件：311.9 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件：155.92 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

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