Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

文件：229.65 Kbytes 页数：7 Pages

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isc P-Channel MOSFET Transistor

文件：275.03 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

文件：252.33 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：281.02 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

文件：233.24 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体