8A super fast recovery diode

FEATURES Superfast recovery times-epitaxial construction. Low forward voltage, high current capability. Hermetically sealed. Low leakage. High surge capability. Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

文件：274.35 Kbytes 页数：2 Pages

ASEMI

强元芯电子

超快恢复二极管

ASEMI

强元芯电子

N-Channel 20-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is  extracted and optimized over the  −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at

文件：234.64 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double- Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size

文件：195.59 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

GSM/GPRSGPS Module

文件：198.31 Kbytes 页数：1 Pages

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