P-Channel MOSFET

SFD25N06BT采用稳先微电子先进的高密度沟槽技术制造，是具有高电流处理能力的绿色环保表面贴装封装器件，可广泛应用于开关电源等应用。 60V, 25A \nRDS(ON) =32mΩ (Max.) @ VGS = 10V, ID = 10A \n100%EAS保证\n绿色环保\n超低导通电阻\n良好的CdV/dt效应下降\n先进的高密度沟槽技术;

Winsemi

稳先微电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.06Ω(Max)@VGS= 10V DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.52 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.048 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

文件：207.3 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.048 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

文件：155.08 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司