首页 >SF4230T>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighPowerInfraredEmitter(850nm) Features •Pointlightsourcewithhighefficiencyandsmall package •die-size(emittingarea)1x1mm2 •max.DC-current1A •Lowthermalresistance(15K/W) •Maximumofspectralemissionat850nm •ESDsaveupto2kVacc.toJESD22-A114-B Applications •Infrared | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
DualN-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •LowCurrentDC/DC •NotebookPC -SystemPower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualN-Channel30-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SingleWindowSingleModeWidebandFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
MiniSingleWindowSingleModeFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
MiniSingleWindowSingleModeFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
1.2mmDiscreteHFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | TriQuint | ||
1.2mmDiscreteHFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | TriQuint | ||
DC-12GHzDiscreteHFET Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe | TriQuint TriQuint Semiconductor | TriQuint |
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