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SFH4230

HighPowerInfraredEmitter(850nm)

Features •Pointlightsourcewithhighefficiencyandsmall package •die-size(emittingarea)1x1mm2 •max.DC-current1A •Lowthermalresistance(15K/W) •Maximumofspectralemissionat850nm •ESDsaveupto2kVacc.toJESD22-A114-B Applications •Infrared

OSRAMOSRAM GmbH

艾迈斯欧司朗欧司朗光电半导体

SFH-4230

IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung

OSRAMOSRAM GmbH

艾迈斯欧司朗欧司朗光电半导体

SI4230DY

DualN-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •LowCurrentDC/DC •NotebookPC -SystemPower

VishayVishay Siliconix

威世科技威世科技半导体

Si4230DY

DualN-Channel30-V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SWFC4230

SingleWindowSingleModeWidebandFiberCoupler

OPLINK

OPLINK Communications Inc.

SWFC4230A

MiniSingleWindowSingleModeFiberCoupler

OPLINK

OPLINK Communications Inc.

SWFC4230P

MiniSingleWindowSingleModeFiberCoupler

OPLINK

OPLINK Communications Inc.

TGF4230

1.2mmDiscreteHFET

DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith

TriQuint

TriQuint Semiconductor

TGF4230-EEU

1.2mmDiscreteHFET

DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith

TriQuint

TriQuint Semiconductor

TGF4230-SCC

DC-12GHzDiscreteHFET

Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe

TriQuint

TriQuint Semiconductor

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