TRENCH SCHOTTKY BARRIER RECTIFIER SMAF

文件：415.74 Kbytes 页数：5 Pages

DIODES

美台半导体

TRENCH SCHOTTKY BARRIER RECTIFIER SMAF

文件：415.74 Kbytes 页数：5 Pages

DIODES

美台半导体

5A TRENCH SCHOTTKY BARRIER RECTIFIER

•Low Leakage Current\n•Soft, Fast Switching Capability\n•+150°C Operating Junction Temperature;

Diodes

美台半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.07 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator Applications

Search Part number : TK5A500 -> Correct Part number : TDTK5A50D • Low drain-source ON-resistance: RDS (ON)= 1.3 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 3.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500 V) • Enhancement mode: Vth= 2.4 to 4.4 V (VD

文件：186.51 Kbytes 页数：6 Pages

TOSHIBA

东芝