60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

Features • Excellent thermal stability • Common source configuration push-pull • BeO-free package Description The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up

文件：242.53 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

60 W，28 V，HF至1 GHz RF功率LDMOS晶体管

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. • Excellent thermal stability \n• Common source configuration push-pull \n• BeO-free package;

ST

意法半导体

Package：M246；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF POWER TRANSISTOR, THE LDMOSST

STMICROELECTRONICS

意法半导体

4-Channel Speech Controller

文件：378.33 Kbytes 页数：11 Pages

SONiX

松翰科技