SD56060数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.

特性 Features

• Excellent thermal stability
• Common source configuration push-pull
• BeO-free package

简介

SD56060属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的SD56060晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。