TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

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TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

文件：291.22 Kbytes 页数：2 Pages

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TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

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RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

DESCRIPTION Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching result in terminal impedance levels easily handled by the circuit designer. ■ REFRACTORY/

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STMICROELECTRONICS

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TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

文件：291.22 Kbytes 页数：2 Pages

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SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

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SMCDIODE

桑德斯微电子

RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

DESCRIPTION The SD1660 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ■ 860 - 900 MHz ■ 24 VOLTS ■ CLASS AB PUSH PULL ■ INTERNAL INPUT MATCHING ■ DESIGNED

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STMICROELECTRONICS

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TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

文件：291.22 Kbytes 页数：2 Pages

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RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ■ 915 - 960 MHz ■ 24 VOLTS ■ CLASS AB PUSH PULL ■ INTERNAL INPUT MATCHING ■ DESIGNED FOR H

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STMICROELECTRONICS

意法半导体

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

文件：291.22 Kbytes 页数：2 Pages

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