RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ■ 915 - 960 MHz ■ 24 VOLTS ■ CLASS AB PUSH PULL ■ INTERNAL INPUT MATCHING ■ DESIGNED FOR H

文件：98.37 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

ST

意法半导体

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheelin

文件：291.22 Kbytes 页数：2 Pages

DCCOM

道全

SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal sliicon junction ,majority carriet conduction • Guard ring for overcoltage protection • Low power loss,high efficiency • High current capability ,Low forward voltage drop • High surge capability

文件：145.95 Kbytes 页数：2 Pages

CHENYI

商朗电子

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

文件：40.24 Kbytes 页数：2 Pages

HY

虹扬科技

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：182 Kbytes 页数：2 Pages

MOSPEC

统懋