RF & MICROWAVE TRANSISTORS

DESCRIPTION The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability.

文件：94.99 Kbytes 页数：4 Pages

Microsemi

美高森美

RF AND MICROWAVE TRANSISTORS

DESCRIPTION: The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability.

文件：90.14 Kbytes 页数：3 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：M135；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 35V 175MHZ M135

Microsemi

美高森美

RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS

DESCRIPTION: The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability.

文件：135.06 Kbytes 页数：4 Pages

Microsemi

美高森美

RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS

DESCRIPTION: The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability.

文件：177.8 Kbytes 页数：4 Pages

ADPOW

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −28 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ PO

文件：47.6 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

RF BJT

NJS

Package：M113；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 35V 175MHZ M113

Microsemi

美高森美