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SD103CWS-V

SmallSignalSchottkyDiodes

Features •TheSD103seriesisametal-on-siliconSchottkybarrierdevicewhichisprotectedbyaPNjunctionguardring •ThisdiodeisalsoavailableintheMini-MELFcasewiththetypedesignationsLL103AtoLL103C,DO35casewiththetypedesignationsSD103AtoSD103CandSOD123casewithty

VishayVishay Siliconix

威世科技威世科技半导体

SD103CWS-V

2.0ASurfaceMountSchottkyBarrierDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SD103CWS-V-G

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技威世科技半导体

SD103CW-TP

400mWSmallSignalSchottkyDiode20to40Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffix designatesRoHSCompliant.Seeorderinginformation) •GuardRingProtection •LowForwardVoltageDrop •LowPowerLossForHighEfficiency •DeviceMarkingCode:SD103AW:S4

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

SD103CW-V

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技威世科技半导体

SD103CW-V

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技威世科技半导体

SD103CX

SchottkyBarrierDiode

FEATURES •LowForwardVoltageDrop. •GuardRingConstructionForTransientProtection. •NegligibleReverseRecoveryTime. •LowReverseCapacitance. APPLICATIONS •Schottybarrierswitching.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SD103N

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

SD103R

DISCRETEPOWERDIODESandTHYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

SD103XWS

SurfaceMountSchottkyBarrierDiodes

Features •LowForwardVoltage

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

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