SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3)

文件：246.95 Kbytes 页数：3 Pages

DIODES

美台半导体

SCHOTTKY BARRIER SWITCHING DIODE

„ FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection

文件：82.91 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER SWITCHING DIODE

„ FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection

文件：82.91 Kbytes 页数：3 Pages

UTC

友顺

For general purpose applications

FEATURES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blo

文件：94.06 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, an

文件：100.53 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, an

文件：100.53 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

350mA, 20V - 40V Schottky Barrier Diode

FEATURES AEC-Q101 qualified Low power loss, high current capability, low VF Surface mound device type Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage rectifications High-efficiency DC-DC conversions Switch mode power supplies Inv

文件：309.44 Kbytes 页数：5 Pages

TSC

台湾半导体

SCHOTTKY BARRIER SWITCHING DIODE

„ FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection

文件：82.91 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER SWITCHING DIODE

„ FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection

文件：82.91 Kbytes 页数：3 Pages

UTC

友顺

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic lev

文件：85.51 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司