N-channel SiC（碳化硅）功率MOSFET

SCT3080KL是1200V 31A的Nch SiC功率MOSFET。 • Low on-resistance\n• Fast reverse recovery\n• Simple to drive\n• Pb-free lead plating ; RoHS compliant;

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N-channel SiC power MOSFET

文件：734.9 Kbytes 页数：14 Pages

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N-channel SiC（碳化硅）功率MOSFET

沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的导通电阻可降低50%，这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。 • Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive\n• Pb-free lead plating ; RoHS compliant\n• Qualified to AEC-Q101;

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N-channel SiC power MOSFET

Features 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Application ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives

文件：934.02 Kbytes 页数：13 Pages

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Automotive Grade N-channel SiC power MOSFET

Features 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ・Automobile ・Switch mode power supplies

文件：1.39067 Mbytes 页数：17 Pages

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罗姆

SiC N-Channel MOSFET

FEATURES · Fast Switching Speed · Fast Reverse Recovery · Easy to Parallel · Simple to Drive APPLICATIONS ·Automobile ·Switch Mode Power Supplies ·Motor drives

文件：365.72 Kbytes 页数：4 Pages

ISC

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