SCS110KG

Marking：SCS110KG；Package：TO-220AC；SiC Schottky Barrier Diode

Features 3)High-speedswitchingpossible 2)Reducedtemperaturedependence 1)Shorterrecoverytime

SCS110KGC

SiC Schottky Barrier Diode

Features 1)Shorterrecoverytime 2)Reducedtemperaturedependence 3)High-speedswitchingpossible Construction Siliconcarbideepitaxialplanertype

SCS110KGC

Package：TO-220-2；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 10A TO220AC

Rohm Semiconductor

S-CSZA110A

GlassPassivatedJunctionZenerVoltageRegulator1.0WattSteadyState

FEATURES •1Wzenervoltageregulatordiodes •PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 •Guardingforovervoltageprotection •Idealforsurface-mountapplications •Hightemperaturesolderingguaranteed:260°C/10secondsat terminals •Wedeclaretha

SDB110

1.0AMP.SchottkyBarrierRectifiers

Features ◇Metaltosiliconrectifier,majoritycarrierconduction ◇Lowforwardvoltagedrop ◇Easypickandplace ◇Highsurgecurrentcapability ◇PlasticmaterialusedcarriersUnderwritersLaboratoryClassification94V-0 ◇Epitaxialconstruction ◇Hightemperaturesoldering:260oC/10

SDB110

1.0AMP.SchottkyBarrierBridgeRectifiers

SDB110

1.0AMP.SchottkyBarrierBridgeRectifiers

Features ◇Metaltosiliconrectifier,majoritycarrierconduction ◇Lowforwardvoltagedrop ◇Easypickandplace ◇Highsurgecurrentcapability ◇PlasticmaterialusedcarriersUnderwritersLaboratoryClassification94V-0 ◇Epitaxialconstruction ◇Hightemperaturesoldering:260°C/10

SDB110Q

SchottkyBarrierDiode

SDB110Q

GeneralPurposeSchottkyBarrierDiode

GeneralDescription TheSDB110QSchottkybarrierdiodesaredesignedforhigh-speedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductions.Miniaturesurfacemountpackageisexcellentforhand-heldandportableapplicationswherespace

SDB110Q

SchottkyBarrierDiode

Features •Lowforwardvoltage:VF=Max.0.4V(@IF=10mA) •Lowreversecurrent:IR=Max.0.5㎂(@VR=5V) •Highspeedswitchingapplication