MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V driv

文件：55.7 Kbytes 页数：6 Pages

SANYO

三洋

SCH2816

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET (SCH1416) and a Schottky barrier diode (SS05015) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed swit

文件：65.61 Kbytes 页数：5 Pages

SANYO

三洋

MOSFET , SBD

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1417) and a Schottky Barrier Diode (SS05015SH) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed swi

文件：65.64 Kbytes 页数：5 Pages

SANYO

三洋

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switch

文件：48.96 Kbytes 页数：6 Pages

SANYO

三洋

General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switch

文件：113.39 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V driv

文件：47.22 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V dri

文件：67.22 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V dri

文件：68.13 Kbytes 页数：6 Pages

SANYO

三洋

N-channel SiC power MOSFET co-packaged with SiC-SBD

文件：493.73 Kbytes 页数：13 Pages

ROHM

罗姆

N-channel SiC power MOSFET

文件：822.18 Kbytes 页数：14 Pages

ROHM

罗姆