STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY

HIGH VOLTAGE, HIGH DENSITY, LEADED, SILICON RECTIFIER ASSEMBLY • Low forward voltage drop • Low reverse leakage current • High thermal shock resistance • Corona free construction • Low distributed capacitance

文件：111.99 Kbytes 页数：3 Pages

SEMTECH

先之科

NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications

NPN Epitaxial Planar Silicon Transistor Features • Composite type with 2 NPN transistors contained in a single package, facilitating high-density mounting. • Ultrasmall package permitting applied sets to be small and slim. Applications • Low-frequency General-Purpose amplifier, high-speed swi

文件：38.87 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor

Bipolar Transistor 15V, 0.6A, Low VCE(sat) NPN Single SCH6 Features • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting • Ultrasmall package permitting applied sets to be small and slim • Small ON-resistance (Ron) Applications • Low-frequ

文件：365.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications

NPN Epitaxial Planar Silicon Transistor Features • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting. • Ultrasmall package permitting applied sets to be small and slim. • Small ON-resistance (Ron). Applications • Low-frequency power amplif

文件：36.78 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor

Bipolar Transistor 15V, 0.6A, Low VCE(sat) NPN Single SCH6 Features • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting • Ultrasmall package permitting applied sets to be small and slim • Small ON-resistance (Ron) Applications • Low-frequ

文件：365.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY

HIGH VOLTAGE, HIGH DENSITY, LEADED, SILICON RECTIFIER ASSEMBLY • Low forward voltage drop • Low reverse leakage current • High thermal shock resistance • Corona free construction • Low distributed capacitance

文件：111.99 Kbytes 页数：3 Pages

SEMTECH

先之科

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET (SCH1407) and a schottky barrier diode (SS05015) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

文件：50.52 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel sillicon MOSFET (SCH1412) and a schottky barrier diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed swit

文件：48.77 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

文件：54.5 Kbytes 页数：6 Pages

SANYO

三洋

General-Purpose Switching Device Applications

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

文件：113.11 Kbytes 页数：6 Pages

ONSEMI

安森美半导体