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SC411MLTRT

SynchronousBuckPseudo-FixedFrequencyPowerSupplyController

SEMTECHSemtech Corporation

升特

SCS411D

SurfaceMountSchottkyBarrierRectifiers

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SCS411SDF

SmallSignalSchottkyBarrierDiode

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SD411

N-ChannelEnhancementModeDualDMOSFET

DESCRIPTION TheSD411isconstructedutilizingCalogic’shighspeedlateralDMOStechniquesfeaturingtightmatchingcharacteristicsbetweeneachFET.Thisdeviceisanexcellentchoiceforinstrumentation,communication,RFandVideodesigns. FEATURES •NormallyOFFConfiguration •

Calogic

Calogic, LLC

SDP411D

BandswitchingDiode

Features •Extremelysmallsizepackage:1.7×1.2×0.9㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)

AUK

AUK corp

SDP411D

BandswitchingDiode

Features •Extremelysmallsizepackage:1.7×1.25×0.9㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

SDP411Q

BandswitchingDiode

Features •Extremelysmallsizepackage:1.2×0.8×0.7㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)

AUK

AUK corp

SDP411Q

BandswitchingDiode

Features •Extremelysmallsizepackage:1.2×0.8×0.7㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

SF_MJ411

BipolarNPNDevice

SEME-LAB

Seme LAB

SIA411DJ

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchforPortableDevices

VishayVishay Siliconix

威世科技威世科技半导体

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