首页 >SC2012CQDKR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDCeramicMultilayerChipInductors FEATURES ExcellentQfactorandSRFcharacteristics Smallsizeissuitableforsmallportableequipment Supportsoperatingfrequencyupto6GHzwith inductancevaluesfrom0.6nHto470nH -55°C~+125°C APPLICATIONS RFResonanceandImpedanceMatchingCircuit RFandwirelesscommunication | RFERFE international RFE国际公司RFE国际股份有限公司 | RFE | ||
MultilayerChipCommonModeFilter | SUMIDASumida America Components Inc. 胜美达电子 | SUMIDA | ||
SMDWireWoundEMICommonModeChip | FRONTIER Frontier Electronics | FRONTIER | ||
DiscreteDiodes | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER | ||
MultilayerChipLCFilters | SUMIDASumida America Components Inc. 胜美达电子 | SUMIDA | ||
ShieldedPowerInductor??SER2000 | COILCRAFTCoilcraft lnc. 线艺美国线艺公司 | COILCRAFT | ||
FIBEROPTICPINPHOTODIODE FIBEROPTICPINPHOTODIODE | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
200AMP100-140VOLTSNPNTRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI Solid States Devices, Inc | SSDI | ||
HIGHENERCYNPNTRANSISTOR [SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HighEnergyNPNTransistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI Solid States Devices, Inc | SSDI |
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