首页 >SC020JT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
15.6x5.2x5.2mm | CONQUERConquer Electronics Co., Ltd. 功得电子功得电子工业股份有限公司 | CONQUER | ||
6.1x2.6x2.6mm(2410) | CONQUERConquer Electronics Co., Ltd. 功得电子功得电子工业股份有限公司 | CONQUER | ||
10.1x3.1x3.1mm(4012) | CONQUERConquer Electronics Co., Ltd. 功得电子功得电子工业股份有限公司 | CONQUER | ||
10.1x3.1x3.1mm(4012) | CONQUERConquer Electronics Co., Ltd. 功得电子功得电子工业股份有限公司 | CONQUER | ||
EXTERNAL??TAMPERPROOF | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | TFUNKVishay Telefunken 威世威世（VISHAY）集团 | TFUNK | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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