Low VF Schottky Barrier Diode 30V, 3.0A Rectifier

30V, 3.0A Rectifier Features • Small switching noise. • Low forward voltage (IF=3A, VF max=0.42V). • Ultrasmall package permitting applied sets to be small and slim. Applications • High frequency rectification (switching regulators, converters, choppers).

文件：40.96 Kbytes 页数：3 Pages

SANYO

三洋

Low VF Schottky Barrier Diode 30V, 3.0A Rectifier

ONSEMI

安森美半导体

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

文件：93.24 Kbytes 页数：7 Pages

TEMIC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

文件：53.87 Kbytes 页数：8 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

文件：53.87 Kbytes 页数：8 Pages

NEC

瑞萨