Schottky Barrier Diode

Schottky Barrier Diode 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode Features • Low switching noise • Low forward voltage (IF=2.0A, VF max=0.52V) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Applications • High frequency rectification

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安森美半导体

Low VF Schottky Barrier Diode 30V, 2.0A Rectifier

30V, 2.0A Rectifier Features • Small switching noise. • Low forward voltage (IF=2.0A, VF max=0.52V) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Applications • High frequency rectification (switching regulators, converters, choppers).

文件：63.42 Kbytes 页数：4 Pages

SANYO

三洋

Schottky Barrier Diode

ONSEMI

安森美半导体

Package：8-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 30V 2A 8EMH

ONSEMI

安森美半导体