4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER

Features Patented TrenchSBR® technology provides superior avalanche capability versus schottky diodes, ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF). Better efficiency and cooler operation. Reduced high temperature reverse leakage. Increased

文件：680.8 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：4U30；Package：U-DFN2020-2；4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER

Features Patented TrenchSBR® technology provides superior avalanche capability versus schottky diodes, ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF). Better efficiency and cooler operation. Reduced high temperature reverse leakage. Increased

文件：680.8 Kbytes 页数：5 Pages

DIODES

美台半导体

4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER

文件：598.89 Kbytes 页数：5 Pages

DIODES

美台半导体

TRENCH SUPER BARRIER RECTIFIER

The SBRT4U30LP provides very low VF and excellent reverse leakage stability at high temperatures. It is ideal for use as bypass diode and rectifier, freewheel diode or blocking diode in applications.\n\n\t\t\t\t\t\t\n\n\t\t\t\t\t\t\n\n\t\t\t\t\t\t\n\n\n\t\t\t\t\t\n\t\t\t\t\n\t\t\t\n\n\n\n\n\t\t\t\n\

Diodes

美台半导体

Package：2-UDFN；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SBR 30V 4A U-DFN2020-2

DIODES

美台半导体