Schottky Barrier Rectifier

FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device perfo

文件：275.67 Kbytes 页数：2 Pages

ISC

无锡固电

20A SBR® SUPER BARRIER RECTIFIER

Features 100 Avalanche tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak

文件：199.85 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20A60CTB；Package：TO263；20A SBR® SUPER BARRIER RECTIFIER

Features 100 Avalanche tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak

文件：199.85 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20B100CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation. Reduced high-temperature reverse leakage; Increased reliabi

文件：489.89 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20E100CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features  Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications.  Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased

文件：389.31 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20E120CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features  Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications.  Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased r

文件：491.83 Kbytes 页数：5 Pages

DIODES

美台半导体

20A SBR SUPER BARRIER RECTIFIER

Description Super Barrier Rectifier (SBR®) is a proprietary and patented Diodes Incorporated technology that utilizes a Metal Oxide Semiconductor MOS) manufacturing process to create a superior alternative to the Schottky diode. This Super Barrier Rectifier (SBR) diode has been designed to me

文件：382.93 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20M150；Package：TO252；20A SBR SUPER BARRIER RECTIFIER

Description Super Barrier Rectifier (SBR®) is a proprietary and patented Diodes Incorporated technology that utilizes a Metal Oxide Semiconductor MOS) manufacturing process to create a superior alternative to the Schottky diode. This Super Barrier Rectifier (SBR) diode has been designed to me

文件：382.93 Kbytes 页数：5 Pages

DIODES

美台半导体

Schottky Barrier Rectifier

FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·Soft, Fast Switching Capability ·High surge capability MECHANICAL CHARACTERISTICS ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.

文件：347.61 Kbytes 页数：2 Pages

ISC

无锡固电

20A SBR SUPER BARRIER RECTIFIER PowerDI5060-8

Features Patented SBR® Technology Provides Superior Avalanche Capability Versus Schottky Diodes, Ensuring More Rugged and Reliable End Applications Reduced Ultra-Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage; Increased Reliabi

文件：551.68 Kbytes 页数：5 Pages

DIODES

美台半导体