HighVoltageFast-SwitchingNPNPowerTransistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA

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WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

High Voltage Fast-Switching NPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA ◆ Built-in freewheeling diode

文件：365.71 Kbytes 页数：5 Pages

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

丝印：SBR15U100CT；Package：TO252；15A SBR SUPER BARRIER RECTIFIER

Features 100 Avalanche Tested Patented Super Barrier Rectifier SBR ® Technology, providing a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation Reduced hi

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DIODES

美台半导体

丝印：SBR20A45；Package：TO252；20A SBR SUPER BARRIER RECTIFIER

Applications  Switching Power Supplies  DC-DC Converter  Freewheeling Diodes Features and Benefits  Ultra-Low Forward Voltage Drop  Excellent High Temperature Stability  Patented Super Barrier Rectifier SBR® Technology  Soft, Fast Switching Capability  Lead-Free Finish; RoHS Com

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DIODES

美台半导体

丝印：SBR20A60CTB；Package：TO263；20A SBR® SUPER BARRIER RECTIFIER

Features 100 Avalanche tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak

文件：199.85 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20B100CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation. Reduced high-temperature reverse leakage; Increased reliabi

文件：489.89 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20E100CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features  Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications.  Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased

文件：389.31 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20E120CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features  Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications.  Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased r

文件：491.83 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20M150；Package：TO252；20A SBR SUPER BARRIER RECTIFIER

Description Super Barrier Rectifier (SBR®) is a proprietary and patented Diodes Incorporated technology that utilizes a Metal Oxide Semiconductor MOS) manufacturing process to create a superior alternative to the Schottky diode. This Super Barrier Rectifier (SBR) diode has been designed to me

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DIODES

美台半导体

丝印：SBR20U50S；Package：PowerDI5060-8；20A SBR SUPER BARRIER RECTIFIER PowerDI5060-8

Features Patented SBR® Technology Provides Superior Avalanche Capability Versus Schottky Diodes, Ensuring More Rugged and Reliable End Applications Reduced Ultra-Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage; Increased Reliabi

文件：551.68 Kbytes 页数：5 Pages

DIODES

美台半导体