SBP-9039832526-1010-E1规格书应用电路批发供应-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SBP-9039832526-1010-E1	文件：384.75 Kbytes Page：3 Pages	W-Band Power Amplifier, 90 to 98 GHz, 25 dB Gain, 26 dBm P1dB Description: Model SBP-9039832526-1010-E1 is a gallium nitride (GaN) based high power amplifier with a typical small signal gain 25 dB and a nominal P1dB of +26 dBm across the frequency range of 90 to 98 GHz. The DC power requirement for the amplifier is +15 VDC/850 mA. The mechanical configurat 文件：384.75 Kbytes 页数：3 Pages	ERAVANT	ERAVANT
SBP-9039832526-1010-E1	文件：300 bytes Page：1 Pages	W-Band Power Amplifier SBP-9039832526-1010-E1 is a gallium nitride (GaN) based high power amplifier with a typical small signal gain of 25 dB and a nominal P1dB of +26 dBm across the frequency range of 90 to 98 GHz. The DC power requirement for the amplifier is +15 VDC/650 mA. The mechanical configuration offers an in lin	Eravant	Eravant
SBR10E45P5-13	文件：0 bytes Page：0 Pages	DIODES/美台 POWERDI5	DIODES/美台上传：深圳市佳杰伟业科技有限公司	DIODES/美台
SBR20A300CTFP-G	文件：0 bytes Page：0 Pages	DIODES TO220F	DIODES 美台半导体上传：深圳市富诚威科技有限公司	DIODES
SBR20U150CT	文件：0 bytes Page：0 Pages	DIODES美台 TO-220	DIODES美台上传：深圳市乐创天科技有限公司	DIODES美台

更多SBP-9039832526-1010-E1供应商更新时间2025-10-13 14:26:00