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CEB4060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP4060AR

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,15A,RDS(ON)=85mΩ@VGS=10V. •SuperhighdensecelldesignforextremelylowRDS(ON) •Highpowerandcurrenthandlingcapability. •TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP4060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU4060A

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4060AL

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CEU4060AL

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CF4060CT

40AHighPowerSchottkyBarrierRectifier

CHM4060APAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT15Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

产品属性

  • 产品编号:

    SBL4060PT

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

    管件

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    40A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -55°C ~ 125°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-3P-3,SC-65-3

  • 供应商器件封装:

    TO-3P

  • 描述:

    DIODE ARRAY SCHOTTKY 60V TO3P

供应商型号品牌批号封装库存备注价格
光宝
16+
TO-3P
329
原装现货假一罚十
询价
LITEON/光宝
2024+实力库存
TO-3P
329
只做原厂渠道 可追溯货源
询价
LT
03+
TO-247
1019
询价
DIODE美台
17+
TO-247
6200
询价
光宝
TO-3P
10265
提供BOM表配单只做原装货值得信赖
询价
DIODES美台
20+
TO-247
38560
原装优势主营型号-可开原型号增税票
询价
光宝
2023+
TO-3P
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
光宝
21+
TO-3P
35200
一级代理/放心采购
询价
LINEAR/凌特
22+
TO-247
5623
只做原装正品现货!或订货假一赔十!
询价
DIODES/美台
23+
TO3P
90000
只做原厂渠道价格优势可提供技术支持
询价
更多SBL4060PT供应商 更新时间2024-6-6 13:30:00