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SBL2030FCT

20AmpSchottkyBarrierRectifier30to45Volts

Features •LowPowerLoss •HighEfficiency •LowForwardVoltage,HighCurrentCapability •Highsurgecapacity •Case:ITO-220ABFullMoldedPlasticPackage

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

SBL2030FCT

SCHOTTKYBARRIERRECTIFIER

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

SBL2030PT

20ASCHOTTKYBARRIERRECTIFIER

DIODESDiodes Incorporated

美台半导体

SBL2030PT

20ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarity

DIODESDiodes Incorporated

美台半导体

SBL2030PT

SCHOTTKYRECTIFIER

GE

GE Industrial Company

SBL2030PT

LowVFSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotec

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SBL2030PT

DUALSCHOTTKYBARRIERRECTIFIERS

EIC

EIC discrete Semiconductors

SBL2030PT

DualCommon-CathodeSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

SBL2030PT

DualCommon-CathodeSchottkyRectifier

FEATURES •Powerpack •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •Solderdip275°Cmax.,10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半导体

SBL2030PT

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30---100V CURRENT:20A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfreewheeling,andpolarity

DSK

Diode Semiconductor Korea

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