SCHOTTKY BARRIER RECTIFIER DIODES

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EIC

10A SCHOTTKY BARRIER RECTIFIER

文件：75.64 Kbytes 页数：3 Pages

DIODES

美台半导体

10A SCHOTTKY BARRIER RECTIFIER

Diodes

美台半导体

Package：TO-220-2；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 10A TO220AC

PAM

龙鼎微

LOW VF SCHOTTKY BARRIER RECTIFIERS

Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

文件：893.14 Kbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte

文件：199.82 Kbytes 页数：3 Pages

JIANGSU

长电科技

Low VF Schottky Barrier Rectifiers

Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inver

文件：103.12 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

Schottky Barrier Rectifiers

Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

文件：236.93 Kbytes 页数：3 Pages

Good-Ark

固锝电子

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

文件：66.13 Kbytes 页数：2 Pages

DIODES

美台半导体

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

文件：156.64 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技