Low VF Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C

文件：43.3 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世科技

Low VF Schottky Barrier Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for D2PAK (TO-263AB) package • Solder bat

文件：157.51 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C

文件：44.65 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世科技

Schottky Barrier Rectifiers

Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

文件：236.97 Kbytes 页数：3 Pages

Good-Ark

固锝电子

Schottky Barrier Rectifiers

Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

文件：236.93 Kbytes 页数：3 Pages

Good-Ark

固锝电子

High Voltage Fast-Switching NPN Power Transistor

General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. Features - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat

文件：690.25 Kbytes 页数：5 Pages

semiWell

矽门微

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte

文件：286.34 Kbytes 页数：3 Pages

JIANGSU

长电科技

16A SCHOTTKY BARRIER RECTIFIER

Features •Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Pol

文件：66.19 Kbytes 页数：2 Pages

DIODES

美台半导体

16A SCHOTTKY BARRIER RECTIFIER

Features •Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

文件：66.31 Kbytes 页数：2 Pages

DIODES

美台半导体

Dual Common Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maxi

文件：148.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技