FREQUENCY MIXERS

NOTES: _ x Average of conversion loss at center of mid-band frequency (fL+fU /4) σ Standard deviation o Non-hermetic t When ordering, specify BNC or SMA connectors. * L=50-100 MHz; M=100-500 MHz ** Below 10 MHz IF, conversion loss increase up to 6 dB higher as frequency decreases to DC. **

文件：74.04 Kbytes 页数：2 Pages

MINI

FREQUENCY MIXERS

Frequency Mixers LEVEL 7 500 Hz to 4.3 GHz

文件：141.5 Kbytes 页数：2 Pages

MINI

FREQUENCY MIXERS

NOTES: _ x Average of conversion loss at center of mid-band frequency (fL+fU /4) σ Standard deviation o Non-hermetic t When ordering, specify BNC or SMA connectors. * L=50-100 MHz; M=100-500 MHz ** Below 10 MHz IF, conversion loss increase up to 6 dB higher as frequency decreases to DC. **

文件：74.04 Kbytes 页数：2 Pages

MINI

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap

文件：185.43 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

LOW VF SCHOTTKY BARRIER RECTIFIERS

Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

文件：889.77 Kbytes 页数：2 Pages

SUNMATE

森美特

LOW VF SCHOTTKY BARRIER RECTIFIERS

Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

文件：889.76 Kbytes 页数：2 Pages

SUNMATE

森美特

LOW VF SCHOTTKY BARRIER RECTIFIERS

Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

文件：908.16 Kbytes 页数：2 Pages

SUNMATE

森美特

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

文件：156.93 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO

文件：149.13 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

20A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

文件：66.54 Kbytes 页数：2 Pages

DIODES

美台半导体