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SB3100-B

3.0ASCHOTTKYBARRIERRECTIFIER

Features •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •SurgeOverloadRatingto80APeak •ForUseinLowVoltage,HighFrequencyInverters,Fr

DIODESDiodes Incorporated

美台半导体

SB3100B-G

LeadedSchottkyBarrierRectifiers

Voltage:20to100VCurrent:3.0A Features -Lowdropdownvoltage. -Metal-Semiconductorjunctionwithguardring -Highsurgecurrentcapability -Siliconepitaxialplanarchips. -Foruseinlowvoltage,highefficiencyinverters, freewheeling,andpolarityprotectionapplications

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SB3100E

PowerSchottkyRectifier-3Amp40~100Volt

PowerSchottkyRectifier-3Amp40~100Volt □Features -Lowforwardvoltagedrop -Highcurrentcapability -Highreliability -Highsurgecurrentcapability -Epitaxialconstruction

SIRECTSirectifier Global Corp.

矽莱克半导体深圳市矽莱克半导体有限公司

SB3100-E

SchottkyBarrierRectifiersReverseVoltage20to100VForwardCurrent3.0A

SchottkyBarrierRectifiers ReverseVoltage20to100VForwardCurrent3.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SB3100EA-G

ESDLeadedSchottkyBarrierRectifiers

Features -Lowdropdownvoltage. -3.0AoperationatTA=75°Cwithnothermalrunaway. -Foruseinlowvoltage,highfrequencyinvertorsfreewheelingandpolarityprotection. -Siliconepitaxialplanarchips. -Lead-freepart,meetRoHSrequirements. -ESDtestunderIEC6100-4-2:Standard

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SB3100EB-G

ESDLeadedSchottkyBarrierRectifiers

Features -Lowdropdownvoltage. -3.0AoperationatTA=75°Cwithnothermalrunaway. -Foruseinlowvoltage,highfrequencyinvertorsfreewheelingandpolarityprotection. -Siliconepitaxialplanarchips. -Lead-freepart,meetRoHSrequirements. -ESDtestunderIEC6100-4-2:Standard

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SB3100ET-G

ESDLeadedSchottkyBarrierRectifiers

Features -Lowdropdownvoltage. -3.0AoperationatTA=75°Cwithnothermalrunaway. -Foruseinlowvoltage,highfrequencyinvertorsfreewheelingandpolarityprotection. -Siliconepitaxialplanarchips. -Lead-freepart,meetRoHSrequirements. -ESDtestunderIEC6100-4-2:Standard

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SB3100G

SinglePhase3.0AMPS.GlassPassivatedBridgeRectifiers

SinglePhase3.0AMPS.GlassPassivatedBridgeRectifiers VoltageRange50to1000VoltsCurrent3.0Amperes Features ULRecognizedFile#E-96005 Glasspassivatedjunction Surgeoverloadrating60amperespeak Lowforwardvoltagedrop Hightemperaturesolderingguaranteed:

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SB3100H

PowerSchottkyRectifier-3Amp40~100Volt

□Features -Lowforwardvoltagedrop -Highcurrentcapability -Highreliability -Highsurgecurrentcapability -Epitaxialconstruction -Halogen-Free

SIRECTSirectifier Global Corp.

矽莱克半导体深圳市矽莱克半导体有限公司

SB3100H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to100VoltsCURRENT3.0Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters

PANJITPan Jit International Inc.

強茂強茂股份有限公司

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