Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting applied sets to be compact and slim Applications • Universal-u

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安森美半导体

30V, 500mA Rectifier

30V, 500mA Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure. • Small-sized package, permitting applied sets to be compact and slim. A

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SANYO

三洋

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting applied sets to be compact and slim Applications • Universal-u

文件：296.75 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

500 mA, 30 V, Schottky Barrier Diode, Low IR, Single CP

SB05-03C is Schottky Barrier Diode, 30V, 0.5A, Low IR, Single CP for switching regulators, converters, choppers. • Low forward voltage (VF max=0.55V)\n• Fast reverse recovery time (trr max=10ns)\n• Low switching noise\n• Low leakage current and high reliability due to highly reliable planar structure\n• Small-sized package, permitting applied sets to be compact and slim;

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 500MA 3CP

ONSEMI

安森美半导体