Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting applied sets to be compact and slim Applications • Universal-u

文件：296.75 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 500MA 3CP

ONSEMI

安森美半导体

30V, 500mA Rectifier

30V, 500mA Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall-sized package, permitting SB05-03Q-applied sets to be compa

文件：63.31 Kbytes 页数：2 Pages

SANYO

三洋

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting SB05-03Q-applied sets to be compact and slim Applications • Hi

文件：303.39 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting SB05-03Q-applied sets to be compact and slim Applications • Hi

文件：303.39 Kbytes 页数：5 Pages

ONSEMI

安森美半导体