丝印：J6；Package：SOT-23；NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.1A

文件：534.16 Kbytes 页数：3 Pages

YFWDIODE

佑风微

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

文件：304.21 Kbytes 页数：3 Pages

WEITRON

TRANSISTOR

DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES High hFE and good linearity Complementary to S9015M APPLICATION Pre-Amplifier, Low Level & Low Noise For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.)

文件：165.12 Kbytes 页数：3 Pages

JIANGSU

长电科技

Pre-Amplifier, Low Level & Low Noise

FEATURES Power dissipation CM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

文件：136.05 Kbytes 页数：2 Pages

SECOS

喜可士

Plastic Encapsulated Transistor

FEATURE Complementary to S9015W PACKAGING INFORMATION Weight: 0.0074 g

文件：269.19 Kbytes 页数：2 Pages

SECOS

喜可士

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to S9015W ● Small Surface Mount Package

文件：1.96387 Mbytes 页数：4 Pages

JIANGSU

长电科技

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES ● Complementary to S9015W ● Small Surface Mount Package

文件：464.38 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

丝印：J6；Package：SOT-323；Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To S9015W. ● Excellent HFE Linearity. ● Power dissipation.(PC=0.2W) APPLICATIONS ● Per-Amplifier low level & low noise.

文件：154.05 Kbytes 页数：4 Pages

BILIN

银河微电

Plastic-Encapsulate Transistors

FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W)

文件：165.37 Kbytes 页数：2 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to S9015W Small Surface Mount Package

文件：1.8377 Mbytes 页数：4 Pages

DGNJDZ

南晶电子