Low Level & Low Noise

FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

文件：259.39 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：J6；Package：SOT-23；TRANSISTOR (NPN)

FEATURES Complementary to S9015

文件：876.26 Kbytes 页数：4 Pages

SY

顺烨电子

NPN EPITAXIAL PLANAR TRANSISTOR

Description The S9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation. (PD:450mW) • Complementary to S9015 • High hFE and Good Linearity.

文件：51.12 Kbytes 页数：3 Pages

TGS

丝印：J6；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To S9015. ● Excellent HFE Linearity. ● Power dissipation.(PC=0.2W) APPLICATIONS ● Per-Amplifier low level & low noise.

文件：1.51143 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Complementary to S9015

文件：487.48 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Complementary to S9015

文件：876.28 Kbytes 页数：4 Pages

SHUNYE

顺烨电子

TRANSISTOR (NPN)

FEATURES • High total power dissipation.(PC=0.45W) • High hFE and good linearity • Complementary to S9015

文件：159.83 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Silicon Epitaxial Planar Transistor

FEATURES • Complementary To S9015. • Excellent HFE Linearity. • Power dissipation.(PC=0.2W) APPLICATIONS • Per-Amplifier low level & low noise.

文件：259.589 Kbytes 页数：4 Pages

DSK

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications

文件：583.75 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：J6；Package：SOT-23；NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.1A

文件：534.16 Kbytes 页数：3 Pages

YFWDIODE

佑风微