丝印：J3Y；Package：SOT-23；TRANSISTOR(NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

文件：465.15 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：J3Y；Package：SOT-23；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

文件：539.17 Kbytes 页数：3 Pages

YFWDIODE

佑风微

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：142.19 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

文件：301.58 Kbytes 页数：4 Pages

DSK

Plastic-Encapsulate Transistors

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

文件：198.19 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：J3Y；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current..

文件：1.55363 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

S OT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：793.97 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

TRANSISTOR(NPN)

FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：532.33 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：878.13 Kbytes 页数：4 Pages

JIANGSU

长电科技

丝印：J3Y；Package：SOT-23；High Collector Current

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

文件：564.48 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子