丝印：S8050Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

文件：1.62742 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：J3Y；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current..

文件：1.55363 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

S OT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：793.97 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

丝印：J3Y；Package：SOT-23；TRANSISTOR (NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

文件：866.27 Kbytes 页数：4 Pages

SY

顺烨电子

SOT-23 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：237.77 Kbytes 页数：2 Pages

TGS

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

文件：69.48 Kbytes 页数：1 Pages

WINGS

永盛电子

TRANSISTOR(NPN)

FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：532.33 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

文件：878.13 Kbytes 页数：4 Pages

JIANGSU

长电科技

丝印：J3Y；Package：SOT-23；High Collector Current

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

文件：564.48 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

Low Frequency Power Amplifier

FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to S8550 与 S8550

文件：206.2 Kbytes 页数：2 Pages

GSME

桂微